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SSM6L09FU

Part Number	SSM6L09FU
Manufacturer	Toshiba Semiconductor
Description	Silicon N/P-Channel MOSFET
Published	Jul 21, 2010
Detailed Description	SSM6L09FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type(π-MOSVI) SSM6L09FU Power Management Switch Hig...
Datasheet	SSM6L09FU PDF File

Overview

SSM6L09FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type(π-MOSVI) SSM6L09FU Power Management Switch High Speed Switching Applications Unit: mm • Small package • Low on-resistance Q1: RDS(ON) = 0.
7 Ω (max) (@VGS = 10 V) Q2: RDS(ON) = 2.
7 Ω (max) (@VGS = −10 V) Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP Rating Unit 30 V ±20 V 400 mA 800 Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP Rating Unit −30 V ±20 V −200 mA −400 JEDEC ― JEITA ― TOSHIBA 2-2J1C ...

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SSM6L09FU Silicon N/P-Channel MOSFET - Toshiba Semiconductor

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