Silicon N Channel MOS FET High Speed Power Switching
Description
Preliminary www.DataSheet4U.com Datasheet
RJK6024DPD
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting REJ03G1936-0100 Rev.1.00 Jun 01, 2010
Outline
RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A)
4 1. 2. 3. 4. Ga...
