isc Silicon PNP Darlington Power Transistor
2SB1340
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min) ·High DC Current Gain-
: hFE= 2000(Min)@ (VCE= -3V, IC= -2A) ·Complement to Type 2SD1889
APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base...
