Purpose Transistor. EMT1DXV6T1 Datasheet

EMT1DXV6T1 Transistor. Datasheet pdf. Equivalent

EMT1DXV6T1 Datasheet
Recommendation EMT1DXV6T1 Datasheet
Part EMT1DXV6T1
Description Dual General Purpose Transistor
Feature EMT1DXV6T1; www.DataSheet4U.com EMT1DXV6T1, EMT1DXV6T5 Dual General Purpose Transistor PNP Dual http://onsemi.c.
Manufacture ON Semiconductor
Datasheet
Download EMT1DXV6T1 Datasheet




ON Semiconductor EMT1DXV6T1
EMT1DXV6T1,
EMT1DXV6T5
www.DataSheet4U.com
Dual General Purpose
Transistor
PNP Dual
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−563 which is designed for low
power surface mount applications.
Features
Lead−Free Solder Plating
Low VCE(SAT), t0.5 V
These are Pb−Free Devices
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
−60
−50
−6.0
−100
V
V
V
mAdc
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD mW
357
(Note 1) mW/°C
2.9
(Note 1)
Thermal Resistance,
Junction-to-Ambient
RqJA
350
(Note 1)
°C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD mW
500
(Note 1) mW/°C
4.0
(Note 1)
Thermal Resistance,
Junction-to-Ambient
RqJA
250
(Note 1)
°C/W
Junction and Storage
Temperature Range
TJ, Tstg −55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad.
http://onsemi.com
(3) (2) (1)
Q1 Q2
(4) (5)
(6)
6
1
SOT−563
CASE 463A
STYLE 1
MARKING DIAGRAM
3T M G
G
1
3T = Specific Device Code
M = Month Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 1
1
Publication Order Number:
EMT1DXV6T1/D



ON Semiconductor EMT1DXV6T1
EMT1DXV6T1, EMT1DXV6T5
www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Min Typ Max Unit
Collector−Base Breakdown Voltage
(IC = −50 mAdc, IE = 0)
Collector−Emitter Breakdown Voltage
(IC = −1.0 mAdc, IB = 0)
Emitter−Base Breakdown Voltage
(IE = −50 mAdc, IE = 0)
Collector−Base Cutoff Current
(VCB = −30 Vdc, IE = 0)
Emitter−Base Cutoff Current
(VEB = −5.0 Vdc, IB = 0)
Collector−Emitter Saturation Voltage (Note 2)
(IC = −50 mAdc, IB = −5.0 mAdc)
DC Current Gain (Note 2)
(VCE = −6.0 Vdc, IC = −1.0 mAdc)
Transition Frequency
(VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz)
Output Capacitance
(VCB = −12 Vdc, IE = 0 Adc, f = 1 MHz)
2. Pulse Test: Pulse Width 300 ms, D.C. 2%.
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
hFE
fT
COB
−60 −
− Vdc
−50 −
− Vdc
−6.0 −
− Vdc
− − −0.5 nA
− − −0.5 mA
Vdc
− − −0.5
120 − 560
MHz
− 140 −
− 3.5 −
pF
ORDERING INFORMATION
Device
Package
Shipping
EMT1DXV6T1
SOT−563*
4000 Units / Tape & Reel
EMT1DXV6T1G
SOT−563*
4000 Units / Tape & Reel
EMT1DXV6T5
SOT−563*
8000 Units / Tape & Reel
EMT1DXV6T5G
SOT−563*
8000 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
http://onsemi.com
2



ON Semiconductor EMT1DXV6T1
EMT1DXV6T1, EMT1DXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS
www.DataSheet4U.com
TA = 25°C
120
1000
TA = 75°C
TA = 25°C
VCE = 10 V
90
60
30
0
0
2
1.5
300 mA
250
200
150
100
IB = 50 mA
3 6 9 12
VCE, COLLECTOR VOLTAGE (V)
Figure 1. IC − VCE
15
TA = 25°C
1
0.5
0
0.01 0.1 1 10
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
100
TA = − 25°C
100
10
0.1
1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain
900
800
700
600
500
400
300
200
TA = 25°C
VCE = 5 V
100
0
0.2 0.5 1 5 10 20 40 60 80 100 150 200
IC, COLLECTOR CURRENT (mA)
Figure 4. On Voltage
13 14
12 12
11 10
10 8
96
84
72
6 0 1 2 3 4 0 0 10 20 30 40
VEB (V)
VCB (V)
Figure 5. Capacitance
Figure 6. Capacitance
http://onsemi.com
3







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)