Flash Memory. AT49BV802D Datasheet

AT49BV802D Datasheet PDF, Equivalent


Part Number

AT49BV802D

Description

8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory

Manufacture

ATMEL Corporation

Total Page 30 Pages
PDF Download
Download AT49BV802D Datasheet


AT49BV802D Datasheet
www.DataSheet4U.com
Features
Single Voltage Read/Write Operation: 2.65V to 3.6V
Access Time – 70 ns
Sector Erase Architecture
– Fifteen 32K Word (64K Bytes) Sectors with Individual Write Lockout
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
Fast Byte/Word Program Time – 10 µs
Fast Sector Erase Time – 100 ms
Suspend/Resume Feature for Erase and Program
– Supports Reading and Programming from Any Sector by Suspending Erase
of a Different Sector
– Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending
Programming of Any Other Byte/Word
Low-power Operation
– 10 mA Active
– 15 µA Standby
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
RESET Input for Device Initialization
Sector Lockdown Support
TSOP and CBGA Package Options
Top or Bottom Boot Block Configuration Available
128-bit Protection Register
Minimum 100,000 Erase Cycles
Common Flash Interface (CFI)
Green (Pb/Halide-free) Packaging
8-megabit
(512K x 16/
1M x 8)
3-volt Only
Flash Memory
AT49BV802D
AT49BV802DT
1. Description
The AT49BV802D(T) is a 2.7-volt 8-megabit Flash memory organized as 524,288
words of 16 bits each or 1,048,576 bytes of 8 bits each. The x16 data appears on
I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 23 sec-
tors for erase operations. The AT49BV802D(T) is offered in a 48-lead TSOP and a
48-ball CBGA package. The device has CE and OE control signals to avoid any bus
contention. This device can be read or reprogrammed using a single power supply,
making it ideally suited for in-system programming.
The device powers on in the read mode. Command sequences are used to place the
device in other operation modes such as program and erase. The device has the
capability to protect the data in any sector (see “Sector Lockdown” section).
To increase the flexibility of the device, it contains an Erase Suspend and Program
Suspend feature. This feature will put the erase or program on hold for any amount of
time and let the user read data from or program data to any of the remaining sectors
within the memory. The end of a program or an erase cycle is detected by the
READY/BUSY pin, Data Polling or by the toggle bit.
3626A–FLASH–2/07

AT49BV802D Datasheet
www.DataSheet4U.com
A six-byte command (Enter Single Pulse Program Mode) sequence to remove the requirement
of entering the three-byte program sequence is offered to further improve programming time.
After entering the six-byte code, only single pulses on the write control lines are required for writ-
ing into the device. This mode (Single Pulse Byte/Word Program) is exited by powering down
the device, or by pulsing the RESET pin low for a minimum of 500 ns and then bringing it back to
VCC. Erase, Erase Suspend/Resume and Program Suspend/Resume commands will not work
while in this mode; if entered they will result in data being programmed into the device. It is not
recommended that the six-byte code reside in the software of the final product but only exist in
external programming code.
The BYTE pin controls whether the device data I/O pins operate in the byte or word configura-
tion. If the BYTE pin is set at logic “1”, the device is in word configuration, I/O0 - I/O15 are active
and controlled by CE and OE.
If the BYTE pin is set at logic “0”, the device is in byte configuration, and only data I/O pins I/O0
- I/O7 are active and controlled by CE and OE. The data I/O pins I/O8 - I/O14 are tri-stated, and
the I/O15 pin is used as an input for the LSB (A-1) address function.
2. Pin Configurations
Pin Name
A0 - A18
CE
OE
WE
RESET
RDY/BUSY
I/O0 - I/O14
I/O15 (A-1)
BYTE
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Reset
READY/BUSY Output
Data Inputs/Outputs
I/O15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
Selects Byte or Word Mode
No Connect
2 AT49BV802D(T)
3626A–FLASH–2/07


Features Datasheet pdf www.DataSheet4U.com Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sec tor Erase Architecture – Fifteen 32K Word (64K Bytes) Sectors with Individua l Write Lockout – Eight 4K Word (8K B ytes) Sectors with Individual Write Loc kout Fast Byte/Word Program Time – 10 µs Fast Sector Erase Time – 100 ms Suspend/Resume Feature for Erase and Pr ogram – Supports Reading and Programm ing from Any Sector by Suspending Erase of a Different Sector – Supports Rea ding Any Byte/Word in the Non-suspendin g Sectors by Suspending Programming of Any Other Byte/Word Low-power Operation – 10 mA Active – 15 µA Standby Da ta Polling, Toggle Bit, Ready/Busy for End of Program Detection RESET Input fo r Device Initialization Sector Lockdown Support TSOP and CBGA Package Options Top or Bottom Boot Block Configuration Available 128-bit Protection Register M inimum 100,000 Erase Cycles Common Flas h Interface (CFI) Green (Pb/Halide-free) Packaging • • • • • • • • • • • • • 8-megabi.
Keywords AT49BV802D, datasheet, pdf, ATMEL Corporation, 8-megabit, 512K, x, 16/, 1M, x, 8, 3-volt, Only, Flash, Memory, T49BV802D, 49BV802D, 9BV802D, AT49BV802, AT49BV80, AT49BV8, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)