8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory
Description
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Features
Single Voltage Read/Write Operation: 2.65V to 3.6V Access Time – 70 ns Sector Erase Architecture
– Fifteen 32K Word (64K Bytes) Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Byte/Word Program Time – 10 µs Fast Sector Erase Time – 100 ms Suspend/Resume Feature fo...
