WFW18N50
Silicon N-Channel MOSFET
Features
18A,500V,RDS(on)(Max0.265Ω)@VGS=10V Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃)
General Description
These N-Channel enhancement mode power field effect transistors are produced using Winsemi’s proprietary, planar stripe, DMOS ...
