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CP357X

Small Signal MOSFET Transistor N-Channel Enhancement-Mode MOSFET Chip

Description

PROCESS Small Signal MOSFET Transistor N-Channel Enhancement-Mode MOSFET Chip CP357X PROCESS DETAILS Die Size Die Thickness Gate Bonding Pad Area Source Bonding Pad Area Top Side Metalization Back Side Metalization 22 x 17 MILS 5.9 MILS 3.9 x 3.9 MILS 14 x 9 MILS Al-Si - 30,000Å Au - 12,000Å GEOMETRY GROSS DIE PER 6 INCH WAFER 63,570 PRINCIPAL DEVICE TYP...

Central Semiconductor

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