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IXFN160N30T
GigaMOS Power MOSFET
Description
Advance Technical Information GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN160N30T RDS(on) ≤ ≤ trr VDSS ID25 = = 300V 130A 19mΩ 200ns miniBLOC, SOT-227 E153432 S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = ...
IXYS Corporation
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IXFN160N30T
GigaMOS Power MOSFET
- IXYS Corporation
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