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IXFP4N100QM

IXYS Corporation
Part Number IXFP4N100QM
Manufacturer IXYS Corporation
Description Power MOSFET
Published May 13, 2011
Detailed Description Advance Technical Information HiPerFETTM Power MOSFET Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High ...
Datasheet PDF File IXFP4N100QM PDF File

IXFP4N100QM
IXFP4N100QM

Overview
Advance Technical Information HiPerFETTM Power MOSFET Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight 1.
6mm (0.
062 in.
) from case for 10s Plastic body for 10s Mounting Torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C IXFP4N100QM VDSS = 1000V ID25 = 2.
2A RDS(on) ≤ 3.
0Ω Maximum Ratings 1000 1000 ±20 ±30 2.
2 16 4 700 5 46 - 55 .
.
.
+150 150 - 55 .
.
.
+150 300 260 1.
13 / 10 2.
5 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.
in.
g OVERMOLDED (IXFP.
.
.
M) OUTLINE G TC = 25°C, pulse width limited by TJM TC = 25°C TC = 2...


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