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2SA1389

POWER TRANSISTOR

Description

isc Silicon PNP Power Transistor 2SA1389 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min) ·High Speed Switching ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High frequency power amplifiers ·Audio power amplifiers ·Switching regulators ·DC-DC converters ...

Inchange Semiconductor

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