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2SA1250
POWER TRANSISTOR
Description
isc Silicon
PNP
Power
Transistor
2SA1250 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·Low Collector Saturatioin Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power switching applications. ABSOLUTE MAXIMUM...
Inchange Semiconductor
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