isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SC1567A ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Designed for low-frequency high power driver. ·Optimum for the driver stage of low-frequency and 4...
