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2SA657

POWER TRANSISTOR

Description

isc Silicon PNP Power Transistor 2SA657 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) ·Complement to Type 2SC520 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Power switching applications. ·DC-DC converter applications. ·Regulator applications. A...

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