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IDH09SG60C

Infineon Technologies
Part Number IDH09SG60C
Manufacturer Infineon Technologies
Description Schottky Diode
Published Jul 7, 2011
Detailed Description IDH09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide...
Datasheet PDF File IDH09SG60C PDF File

IDH09SG60C
IDH09SG60C

Overview
IDH09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 20mA2) • Optimized for high temperature operation net • Lowest Figure Product Summary V DC QC I F; T C< 130 °C 600 15 9 V nC A of Merit QC/IF thinQ! 3G Diode designed for fast switching applications like: • SMPS e.
g.
; CCM PFC • Motor Drives; Solar Applications; UPS Type IDH09SG60C ...


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