Power MOSFET. NVTFS5811NL Datasheet

NVTFS5811NL MOSFET. Datasheet pdf. Equivalent

Part NVTFS5811NL
Description Power MOSFET
Feature NVTFS5811NL Power MOSFET Features 40 V, 6.7 mW, 40 A, Single N−Channel • • • • • Small Footprint (3.
Manufacture ON Semiconductor
Datasheet
Download NVTFS5811NL Datasheet



NVTFS5811NL
NVTFS5811NL
Power MOSFET
40 V, 6.7 mW, 40 A, Single NChannel
Features
Small Footprint (3.3 x 3.3 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
NVTFS5811NLWF Wettable Flanks Product
AECQ101 Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain Cur-
r2e,n3t,R4Y) Jmb (Notes 1,
Power Dissipation
RYJmb (Notes 1, 2, 3)
Steady
State
Tmb = 25°C
Tmb = 100°C
Tmb = 25°C
Tmb = 100°C
Continuous Drain Cur-
r3e,n4t)RqJA (Notes 1 &
Power Dissipation
RqJA (Notes 1, 3)
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
40
±20
40
28
21
10
16
11
3.2
1.6
354
55 to
+175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
IS 17 A
Single Pulse DraintoSource Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 36 A, L = 1.0 mH, RG = 25 W)
EAS 65 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
JunctiontoMounting Board (top) Steady
State (Note 2 and 3)
RYJmb
7.2 °C/W
JunctiontoAmbient Steady State (Note 3)
RqJA
47
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD5112 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surfacemounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
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V(BR)DSS
40 V
RDS(on) MAX
6.7 mW @ 10 V
10 mW @ 4.5 V
ID MAX
40 A
NChannel MOSFET
D (58)
G (4)
S (1,2,3)
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
S
S XXXX
S AYWWG
GG
D
D
D
D
XXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
May, 2013 Rev. 2
1
Publication Order Number:
NVTFS5811NL/D



NVTFS5811NL
NVTFS5811NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
Zero Gate Voltage Drain Current
V(BR)DSS
IDSS
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 5)
IGSS
VGS = 0 V, ID = 250 mA
VGS = 0 V,
VDS = 40 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = "20 V
Gate Threshold Voltage
DraintoSource On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
VGS(TH)
RDS(on)
gFS
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 20 A
VDS = 5 V, ID = 10 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
GatetoSource Charge
QGS
GatetoDrain Charge
QGD
Total Gate Charge
QG(TOT)
SWITCHING CHARACTERISTICS (Note 6)
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
VGS = 4.5 V, VDS = 32 V, ID = 20 A,
RG = 2.5 W
VGS = 10 V, VDS = 32 V, ID = 20 A
TurnOn Delay Time
td(on)
Rise Time
tr
TurnOff Delay Time
td(off)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDS = 32 V,
ID = 20 A, RG = 2.5 W
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 20 A
TJ = 25°C
TJ = 125°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
ta VGS = 0 V, dIS/dt = 100 A/ms,
tb IS = 20 A
Reverse Recovery Charge
QRR
5. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
6. Switching characteristics are independent of operating junction temperatures.
Min
40
1.5
Typ Max Unit
1.0
10
"100
V
mA
nA
2.2 V
5.8 6.7 mW
8.8 10
24.6 S
1570
215
157
17
1
5
9
30
pF
nC
nC
nC
11 ns
55
20
40
0.83 1.2
V
0.70
22 ns
12
10
17 nC
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