HGTH20N50C1. 20N50C1 Datasheet

20N50C1 HGTH20N50C1. Datasheet pdf. Equivalent

Part 20N50C1
Description HGTH20N50C1
Feature HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 April 1995 15A, 20A, 400V and 500V N-C.
Manufacture Intersil Corporation
Datasheet
Download 20N50C1 Datasheet



20N50C1
HGTP15N40C1, 40E1, 50C1, 50E1,
HGTH20N40C1, 40E1, 50C1, 50E1
April 1995
15A, 20A,
400V and 500V N-Channel IGBTs
Features
• 15A and 20A, 400V and 500V
• VCE(ON) 2.5V
• TFI 1µs, 0.5µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• No Anti-Parallel Diode
Applications
Packages
HGTH-TYPES JEDEC TO-218AC
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
• Power Supplies
• Motor Drives
• Protection Circuits
Description
HGTP-TYPES JEDEC TO-220AB
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1,
HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1
are n-channel enhancement-mode insulated gate bipolar transistors
(IGBTs) designed for high-voltage, low on-dissipation applications such as
switching regulators and motor drivers. These types can be operated
directly from low-power integrated circuits.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTH20N40C1
TO-218AC
G20N40C1
HGTH20N40E1
TO-218AC
G20N40E1
HGTH20N50C1
TO-218AC
G20N50C1
HGTH20N50E1
TO-218AC
G20N50E1
HGTP15N40C1
TO-220AB
G15N40C1
HGTP15N40E1
TO-220AB
G15N40E1
HGTP15N50C1
TO-220AB
G15N50C1
HGTP15N50E1
TO-220AB
G15N50E1
NOTE: When ordering, use the entire part number.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
HGTH20N40C1 HGTH20N50C1
HGTH20N40E1 HGTH20N50E1
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . .VCES
Collector-Gate Voltage RGE = 1M. . . . . . . . . . . . . . . . VCGR
Reverse Collector-Emitter Voltage . . . . . . . . . . . . VCES(rev.)
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . IC
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Power Dissipation at TC = +25oC . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . TJ, TSTG
400
400
-5
±20
20
35
100
0.8
-55 to +150
500
500
-5
±20
20
35
100
0.8
-55 to +150
HGTP15N40C1
HGTP15N40E1
400
400
-5
±20
15
35
75
0.6
-55 to +150
HGTP15N50C1
HGTP15N50E1
500
500
-5
±20
15
35
75
0.6
-55 to +150
UNITS
V
V
V
V
A
A
W
W/oC
oC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
wwwh.Dttpa:t/a/wSwhwee.int4teUrs.nil.ectom or 407-727-9207 | Copyright © Intersil Corporation 1999
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File Number 2174.3



20N50C1
Specifications HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1
Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETERS
Collector-Emitter Breakdown
Voltage
Gate Threshold Voltage
Zero-Gate Voltage Collector
Current
Gate-Emitter Leakage Current
Reverse Collector-Emitter
Leakage Current
Collector-Emitter on Voltage
Gate-Emitter Plateau Voltage
On-State Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
40E1, 50E1
40C1, 50C1
Turn-Off Energy Loss per Cycle
(Off Switching Dissipation =
WOFF x Frequency)
40E1, 50E1
40C1, 50C1
Thermal Resistance
Junction-to-Case
SYMBOL
TEST CONDITIONS
BVCES IC = 1mA, VGE = 0
VGE(TH)
ICES
IGES
ICE
VGE = VCE, IC = 1mA
VCE = 400V, TC = +25oC
VCE = 500V, TC = +25oC
VCE = 400V, TC = +125oC
VCE = 500V, TC = +125oC
VGE = ±20V, VCE = 0
RGE = 0, VEC = 5V
VCE(ON)
VGEP
QG(ON)
tD(ON)I
tRI
tD(OFF)I
tFI
IC = 20A, VGE = 10V
IC = 35A, VGE = 20V
IC = 10A, VCE = 10V
IC = 10A, VCE = 10V
IC = 20A, VCE(CLP) = 300V,
L = 25µH, TJ = +100oC,
VGE = 10V, RG = 25
WOFF
IC = 10A, VCE(CLP) = 300V,
L = 25µH, TJ = +100oC,
VGE = 10V, RG = 25
RθJC
HGTH, HGTM
HGTP
LIMITS
HGTH20N40C1, E1, HGTH20N50C1, E1,
HGTP15N40C1, E1 HGTP15N50C1, E1
MIN MAX MIN MAX UNITS
400 - 500 - V
2.0 4.5 2.0 4.5 V
- 250 -
- µA
- - - 250 µA
- 1000 -
- µA
-
-
-
1000
µA
- 100 - 100 nA
- -5 - -5 mA
- 2.5 - 2.5 V
- 3.2 - 3.2 V
-
6 (Typ)
-
6 (Typ)
V
- 33 (Typ) - 33 (Typ) nC
- 50 - 50 ns
- 50 - 50 ns
- 400 - 400 ns
680 (Typ)
400
1000
500
680 (Typ)
400
1000
500
ns
ns
1810 (Typ)
µJ
1070 (Typ)
µJ
-
1.25
-
1.25
oC/W
-
1.67
-
1.67
oC/W
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
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