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Power Transistor. IPP60R385CP Datasheet

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Power Transistor. IPP60R385CP Datasheet






IPP60R385CP Transistor. Datasheet pdf. Equivalent




IPP60R385CP Transistor. Datasheet pdf. Equivalent





Part

IPP60R385CP

Description

Power Transistor



Feature


IPP60R385CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R O N x Qg • Ultra low gate charge • Ex treme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb- free lead plating; RoHS compliant Prod uct Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.385 Ω 17 nC PG-TO22 0 CoolMOS CP is specially desig.
Manufacture

Infineon Technologies

Datasheet
Download IPP60R385CP Datasheet


Infineon Technologies IPP60R385CP

IPP60R385CP; ned for: • Hard switching SMPS topolog ies Type IPP60R385CP Package PG-TO220 Ordering Code SP000082281 Marking 6R 385P Maximum ratings, at T j=25 °C, u nless otherwise specified Parameter Con tinuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pul se Avalanche energy, repetitive t AR2), 3) Avalanche current, r.


Infineon Technologies IPP60R385CP

epetitive t AR2),3) MOSFET dv /dt rugged ness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...480 V s tatic AC (f >1 Hz) Power dissipation Op erating and storage temperature Mountin g torque www.DataSheet4U.net Value 9.0 5.7 27 227 0.3 3 50 ±20 ±30 83 -55 . .. 150 Unit A T C=25 °C I D=3.4 A, V DD=50 V I D=3.4 A, V DD=50 V mJ A V/ ns V P tot T j, T st.


Infineon Technologies IPP60R385CP

g T C=25 °C W °C Ncm 2007-08-28 M3 and M3.5 screws page 1 60 Rev. 2.2 I PP60R385CP Maximum ratings, at T j=25 C, unless otherwise specified Paramete r Continuous diode forward current Diod e pulse current 2) Reverse diode d v /d t 4) Parameter Symbol Conditions IS I S ,pulse dv /dt Symbol Conditions min. Th ermal characteristics Thermal resistanc e, junction - case Th.

Part

IPP60R385CP

Description

Power Transistor



Feature


IPP60R385CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R O N x Qg • Ultra low gate charge • Ex treme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb- free lead plating; RoHS compliant Prod uct Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.385 Ω 17 nC PG-TO22 0 CoolMOS CP is specially desig.
Manufacture

Infineon Technologies

Datasheet
Download IPP60R385CP Datasheet




 IPP60R385CP
CoolMOSTM Power Transistor
Features
• Lowest figure-of-merit RON x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V DS @ Tj,max
R DS(on),max
Q g,typ
IPP60R385CP
650 V
0.385
17 nC
PG-TO220
CoolMOS CP is specially designed for:
• Hard switching SMPS topologies
Type
IPP60R385CP
Package
PG-TO220
Ordering Code Marking
SP000082281 6R385P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
Gate source voltage
ID
I D,pulse
E AS
E AR
I AR
dv /dt
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=3.4 A, V DD=50 V
I D=3.4 A, V DD=50 V
V DS=0...480 V
static
AC (f >1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
Mounting torque
M3 and M3.5 screws
www.DRateavS.he2e.t24U.net
page 1
Value
9.0
5.7
27
227
0.3
3
50
±20
±30
83
-55 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2007-08-28




 IPP60R385CP
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
IPP60R385CP
Value
5.2
27
15
Unit
A
V/ns
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R thJC
R thJA
leaded
Soldering temperature,
wavesoldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10 s
min.
Values
typ.
Unit
max.
- - 1.5 K/W
- - 62
- - 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V (BR)DSS V GS=0 V, I D=250 µA
600
V GS(th) V DS=V GS, I D=0.34 mA 2.5
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
V DS=600 V, V GS=0 V,
T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=5.2 A,
T j=25 °C
V GS=10 V, I D=5.2 A,
T j=150 °C
R G f =1 MHz, open drain
-
-
-
-
-
-
- -V
3 3.5
- 1 µA
10 -
- 100 nA
0.35 0.385
0.94
1.8
-
-
Rev. 2.2
page 2
2007-08-28




 IPP60R385CP
Parameter
Dynamic characteristics
Symbol Conditions
IPP60R385CP
min.
Values
typ.
Unit
max.
Input capacitance
Output capacitance
C iss V GS=0 V, V DS=100 V, - 790 - pF
C oss
f =1 MHz
- 38 -
Effective output capacitance, energy
related5)
C o(er)
Effective output capacitance, time
related6)
C o(tr)
V GS=0 V, V DS=0 V
to 480 V
- 36 -
- 96 -
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t d(on)
- 10 - ns
t r V DD=400 V,
-5-
V GS=10 V, I D=5.2 A,
t d(off)
R G=3.3
- 40 -
tf - 5 -
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q gs
Q gd
Qg
V plateau
V DD=400 V, I D=5.2 A,
V GS=0 to 10 V
-
-
-
-
4 - nC
6-
17 22
5.0 - V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V SD
V GS=0 V, I F=5.2 A,
T j=25 °C
t rr
Q rr
V R=400 V, I F=I S,
di F/dt =100 A/µs
I rrm
- 0.9 1.2 V
- 260 - ns
- 3.1 - µC
- 24 - A
1) J-STD20 and JESD22
2) Pulse width t p limited by T j,max
3) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.
4) ISD=ID, di/dt<=400A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.
5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.2
page 3
2007-08-28






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