9916H Datasheet | AP9916H





(Datasheet) 9916H Datasheet PDF Download

Part Number 9916H
Description AP9916H
Manufacture Advanced Power Electronics
Total Page 6 Pages
PDF Download Download 9916H Datasheet PDF

Features: www.DataSheet.co.kr AP9916H/J Advanced Power Electronics Corp. ▼ Low on-res istance ▼ Capable of 2.5V gate drive ▼ Low drive current ▼ Single Drive Requirement G S D N-CHANNEL ENHANCEMEN T MODE POWER MOSFET BVDSS RDS(ON) ID 18V 25mΩ 35A Description The Advanced Power MOSFETs from APEC provide the de signer with the best combination of fas t switching, ruggedized device design, ultra low on-resistance and cost-effect iveness. G D S TO-252(H) G D S TO- 251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=125℃ IDM P D@TC=25℃ TSTG TJ Parameter Drain-Sour ce Voltage Gate-Source Voltage Continuo us Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 1 Rating 18 ± 12 35 16 90 50 0.4 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Diss ipation Linear Derating Factor Storage Temperature Range Operating Junction Te mperature Range Thermal Data Symbol Rt hj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-am.

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www.DataSheet.co.kr
Advanced Power
Electronics Corp.
AP9916H/J
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low on-resistance
Capable of 2.5V gate drive
Low drive current
Single Drive Requirement
Description
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BVDSS
RDS(ON)
ID
18V
25mΩ
35A
GD S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=125
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
GD
S
TO-251(J)
Rating
18
± 12
35
16
90
50
0.4
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Max.
Value
2.5
110
Unit
/W
/W
Data and specifications subject to change without notice
200227032
Datasheet pdf - http://www.DataSheet4U.net/

                 






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