40NTD Datasheet: Thyristor-Diode Modules





40NTD Thyristor-Diode Modules Datasheet

Part Number 40NTD
Description Thyristor-Diode Modules
Manufacture Naina Semiconductor
Total Page 2 Pages
PDF Download Download 40NTD Datasheet PDF

Features: Naina Semiconductor emiconductor Ltd. Th yristor – Diode Module Features • • • Improved glass passivation f or high reliability Exceptional stabili ty at high temperatures High di/dt and dv/dt capabilities Low thermal resistan ce 40NTD Maximum Ratings (TA = 250C u nless otherwise noted) Parameter Maximu m average forward current @ TJ = 0 85 C Maximum average RMS forward current Ma ximum non-repetitive surge current @ t = 10ms 2 Maximum I t for fusing @ t = 1 0ms Symbol IF(AV) IF(RMS) IFSM It 2 Va lues 40 100 1000 5000 Units A A A As 2 M1 PACKAGE Thermal & Mechanical Spec ifications (TA = 250C unless otherwise noted) Parameter Operating junction tem perature range Thermal resistance, junc tion to case Symbol TJ Rth(JC) Values - 65 65 to +125 +1 0.7 0 Units 0 C C/W Electrical Characteristics (TA = 250C unless otherwise noted) Parameter Maxi mum average on-state current Maximum re petitive peak reverse voltage range For ward voltage drop Gate current required to trigger Gate voltage required .

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Naina Semiconductor Ltd.
Thyristor – Diode Module
Features
Improved glass passivation for high reliability
Exceptional stability at high temperatures
High di/dt and dv/dt capabilities
Low thermal resistance
Maximum Ratings (TA = 250C unless otherwise noted)
Parameter
Symbol Values
Maximum average forward current @ TJ =
850C
IF(AV)
40
Maximum average RMS forward current
IF(RMS)
100
Maximum non-repetitive surge current @ t
= 10ms
IFSM
1000
Maximum I2t for fusing @ t = 10ms
I2t 5000
Units
A
A
A
A2s
40NTD
M1 PACKAGE
Thermal & Mechanical Specifications (TA = 250C unless otherwise noted)
Parameter
Symbol
Operating junction temperature range
Thermal resistance, junction to case
TJ
Rth(JC)
Values
-65 to +125
0.7
Units
0C
0C/W
Electrical Characteristics (TA = 250C unless otherwise noted)
Parameter
Maximum average on-state current
Maximum repetitive peak reverse voltage range
Forward voltage drop
Gate current required to trigger
Gate voltage required to trigger
Holding current range
Maximum latching current
Critical rate of rise of off-state voltage
RMS isolated voltage
Symbol
IT(max)
VRRM
VFM
IGT
VGT
IH
IL
dv/dt
VISO
Values
40
200 to 1600
1.25
100
2
5 to 100
300
300
2500
Units
A
V
V
A
V
mA
mA
V/µs
V
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com

     






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