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TSHG5410
High Speed Infrared Emitting Diode
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www.DataSheet.co.kr TSHG5410 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Leads with stand-off Peak wavelength: λp = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 1...
Vishay Siliconix
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TSHG5410
High Speed Infrared Emitting Diode
- Vishay Siliconix
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