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2SC2873

Toshiba Semiconductor

Silicon NPN Transistor


Description
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2873 Power Amplifier Applications Power Switching Applications 2SC2873 Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching time: tstg = 1.0 μs (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1213 Ab...



Toshiba Semiconductor

2SC2873

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