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Schottky Rectifier. VI20200G Datasheet

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Schottky Rectifier. VI20200G Datasheet






VI20200G Rectifier. Datasheet pdf. Equivalent




VI20200G Rectifier. Datasheet pdf. Equivalent





Part

VI20200G

Description

Dual High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product V20200 G, VF20200G, VB20200G & VI20200G Vishay General Semiconductor Dual High-Volta ge Trench MOS Barrier Schottky Rectifie r Ultra Low VF = 0.62 V at IF = 5 A TMB S ® TO-220AB ITO-220AB FEATURES • T rench MOS Schottky technology • Low f orward voltage drop, low power losses High efficiency operation • Low th ermal resistance • Meets MS.
Manufacture

Vishay

Datasheet
Download VI20200G Datasheet


Vishay VI20200G

VI20200G; L level 1, per J-STD-020, LF maximum pea k of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximu m, 10 s, per JESD 22-B106 (for TO-220AB , ITO-220AB and TO-262AA package) • C ompliant to RoHS directive 2002/95/EC a nd in accordance to WEEE 2002/96/EC TYP ICAL APPLICATIONS 2 V20200G PIN 1 PIN 3 3 1 VF20200G PIN 1 PIN 3 PIN 2 2 3 1 PIN 2 CASE TO-263AB.


Vishay VI20200G

K K TO-262AA 2 1 1 VB20200G PIN 1 PIN 2 K HEATSINK 2 3 For use in high fr equency converters, switching power sup plies, freewheeling diodes, OR-ing diod e, dc-to-dc converters and reverse batt ery protection. MECHANICAL DATA VI2020 0G PIN 1 PIN 3 PIN 2 K PRIMARY CHARACT ERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. 2 x 10 A 200 V 110 A 0.71 V 150 °C Case: TO-2.


Vishay VI20200G

20AB, ITO-220AB, TO-263AB and TO-262AA M olding compound meets UL 94 V-0 flammab ility rating Base P/N-E3 - RoHS complia nt, commercial grade Terminals: Matte t in plated leads, solderable per J-STD-0 02 and JESD 22-B102 E3 suffix meets JES D 201 class 1A whisker test Polarity: A s marked Mounting Torque: 10 in-lbs max imum MAXIMUM RATINGS (TA = 25 °C unle ss otherwise noted).

Part

VI20200G

Description

Dual High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product V20200 G, VF20200G, VB20200G & VI20200G Vishay General Semiconductor Dual High-Volta ge Trench MOS Barrier Schottky Rectifie r Ultra Low VF = 0.62 V at IF = 5 A TMB S ® TO-220AB ITO-220AB FEATURES • T rench MOS Schottky technology • Low f orward voltage drop, low power losses High efficiency operation • Low th ermal resistance • Meets MS.
Manufacture

Vishay

Datasheet
Download VI20200G Datasheet




 VI20200G
www.DataSheet.co.kr
New Product
V20200G, VF20200G, VB20200G & VI20200G
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.62 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V20200G
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VF20200G
123
PIN 1
PIN 2
PIN 3
TO-262AA
K
2
1
VB20200G
PIN 1
K
PIN 2
HEATSINK
3
2
1
VI20200G
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 10 A
TJ max.
2 x 10 A
200 V
110 A
0.71 V
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB and
TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V20200G
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
Non-repetitive avalanche energy
at TJ = 25 °C, L = 60 mH per diode
Peak repetitive reverse current at tp = 2 µs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
EAS
IRRM
dV/dt
VAC
Operating junction and storage temperature range
TJ, TSTG
VF20200G VB20200G
200
20
10
110
60
0.5
10 000
1500
- 40 to + 150
VI20200G
UNIT
V
A
A
mJ
A
V/µs
V
°C
Document Number: 89117
Revision: 24-Jun-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/




 VI20200G
www.DataSheet.co.kr
New Product
V20200G, VF20200G, VB20200G & VI20200G
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage per diode (1)
IR = 1.0 mA
IF = 5 A
IF = 10 A
IF = 5 A
IF = 10 A
Reverse current per diode (2)
VR = 180 V
VR = 200 V
TJ = 25 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VBR 200 (minimum)
0.86
1.23
VF 0.62
0.71
1.9
1.6
IR -
2.5
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
-
1.70
-
0.80
-
-
150
15
UNIT
V
V
µA
mA
µA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20200G
VF20200G
Typical thermal resistance per diode
RθJC
3.2
5.5
VB20200G
3.2
VI20200G
3.2
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V20200G-E3/4W
1.88
ITO-220AB
VF20200G-E3/4W
1.75
TO-263AB
VB20200G-E3/4W
1.39
TO-263AB
VB20200G-E3/8W
1.39
TO-262AA
VI20200G-E3/4W
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
25
Resistive or Inductive Load
20 V(B,I)20200G
15
VF20200G
10
5
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
9
D = 0.5 D = 0.8
8 D = 0.3
D = 0.2
7
6 D = 0.1
D = 1.0
5
4
3T
2
1
D = tp/T
tp
0
0 2 4 6 8 10 12
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89117
Revision: 24-Jun-09
Datasheet pdf - http://www.DataSheet4U.net/




 VI20200G
www.DataSheet.co.kr
New Product
V20200G, VF20200G, VB20200G & VI20200G
Vishay General Semiconductor
100
TA = 150 °C
10 TA = 125 °C
1 TA = 100 °C
0.1
0
TA = 25 °C
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
100
10
1
0.1
0.01
TA = 150 °C
TA = 125 °C
TA = 100 °C
0.001
TA = 25 °C
0.0001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1 10
Reverse Voltage (V)
100
Figure 5. Typical Junction Capacitance Per Diode
10
Junction to Case
1
0.01
V(B,I)20200G
0.1 1 10
t - Pulse Duration (s)
100
Figure 6. Typical Transient Thermal Impedance Per Diode
10
Junction to Case
1
0.01
VF20200G
0.1 1 10
t - Pulse Duration (s)
100
Figure 7. Typical Transient Thermal Impedance Per Diode
Document Number: 89117
Revision: 24-Jun-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/






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