2SC2982 TRANSISTOR Datasheet

2SC2982 Datasheet, PDF, Equivalent


Part Number

2SC2982

Description

Silicon NPN Epitaxial Type TRANSISTOR

Manufacture

Toshiba Semiconductor

Total Page 4 Pages
Datasheet
Download 2SC2982 Datasheet


2SC2982
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2982
Storobo Flash Applications
Medium Power Amplifier Applications
2SC2982
Unit: mm
High DC current gain and excellent linearity
: hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A)
: hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A)
Low saturation voltage
: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA)
Small flat package
PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
Complementary to 2SA1314
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse (Note 1)
Base current
DC
Pulse (Note 1)
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
IBP
PC
PC
(Note 2)
Tj
Tstg
30
30
10
6
2
4
0.4
0.8
500
1000
150
55 to 150
V
V
V
A
A
mW
°C
°C
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2: 2SC2982 mounted on a ceramic substrate (250 mm2 × 0.8 t)
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
1 2004-07-07

2SC2982
2SC2982
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 30 V, IE = 0
IEBO
VEB = 6 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
V (BR) EBO IE = 1 mA, IC = 0
hFE (1)
(Note 3)
VCE = 1 V, IC = 0.5 A
hFE (2)
VCE (sat)
VBE
fT
Cob
VCE = 1 V, IC = 2 A
IC = 2 A, IB = 50 mA
VCE = 1 V, IC = 2 A
VCE = 1 V, IC = 0.5 A
VCB = 10 V, IE = 0, f = 1 MHz
― ― 0.1 µA
― ― 0.1 µA
10 ― ―
V
6 ―― V
140 600
70 140
0.2 0.5
V
0.86 1.5
V
150 MHz
27 pF
Note 3: hFE (1) classification A: 140 to 240, B: 200 to 330, C: 300 to 450, D: 420 to 600
Marking
S
Lot No.
Part No. (or abbreviation code)
Characteristics indicator
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2004-07-07


Features TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2982 Storobo Fla sh Applications Medium Power Amplifier Applications 2SC2982 Unit: mm • Hig h DC current gain and excellent lineari ty : hFE (1) = 140 to 600 (VCE = 1 V, I C = 0.5 A) : hFE (2) = 70 (min), 140 (t yp.), (VCE = 1 V, IC = 2 A) • Low sat uration voltage : VCE (sat) = 0.5 V (ma x) (IC = 2 A, IB = 50 mA) • Small fla t package • PC = 1.0 to 2.0 W (mounte d on a ceramic substrate) • Complemen tary to 2SA1314 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collect or-emitter voltage Emitter-base voltag e Collector current DC Pulse (Note 1) Base current DC Pulse (Note 1) Coll ector power dissipation Junction tempe rature Storage temperature range VCBO VCES VCEO VEBO IC ICP IB IBP PC PC (Not e 2) Tj Tstg 30 30 10 6 2 4 0.4 0.8 50 0 1000 150 −55 to 150 V V V A A mW C °C Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) Note 2: 2SC2982 mounted on a ceramic su.
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