2SC2983 Transistor Datasheet

2SC2983 Datasheet, PDF, Equivalent


Part Number

2SC2983

Description

Silicon NPN Epitaxial Type Transistor

Manufacture

Toshiba Semiconductor

Total Page 4 Pages
Datasheet
Download 2SC2983 Datasheet


2SC2983
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2983
Power Amplifier Applications
Driver Stage Amplifier Applications
2SC2983
Unit: mm
High transition frequency: fT = 100 MHz (typ.)
Complementary to 2SA1225
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 160 V
Collector-emitter voltage
VCEO 160 V
Emitter-base voltage
VEBO 5 V
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
IC
IB
PC
1.5 A
0.3 A
1.0
W
15
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
55 to 150
°C
JEDEC
JEITA
Note1: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-7J1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.36 g (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2010-03-10

2SC2983
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 160 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 10 m A, IB = 0
V (BR) EBO IE = 1 mA, IC = 0
hFE
(Note 2)
VCE = 5 V, IC = 100 mA
VCE (sat)
VBE
fT
Cob
IC = 500 mA, IB = 50 mA
VCE = 5 V, IC = 500 mA
VCE = 10 V, IC = 100 mA
VCB = 10 V, IE = 0, f = 1 MHz
Note 2: hFE classification O: 70 to 140, Y: 120 to 240
Marking
2SC2983
Min Typ. Max Unit
― ― 1.0 μA
― ― 1.0 μA
160
V
5 ―― V
70 240
― ― 1.5 V
― ― 1.0 V
100 MHz
25 pF
C2983
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
Note 3
Note 3: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2 2010-03-10


Features TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2983 Power Ampli fier Applications Driver Stage Amplifie r Applications 2SC2983 Unit: mm • H igh transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Ab solute Maximum Ratings (Ta = 25°C) Ch aracteristics Symbol Rating Unit Co llector-base voltage VCBO 160 V Colle ctor-emitter voltage VCEO 160 V Emitt er-base voltage VEBO 5 V Collector cu rrent Base current Collector power diss ipation Ta = 25°C Tc = 25°C IC IB P C 1.5 A 0.3 A 1.0 W 15 Junction tempe rature Tj 150 °C Storage temperature range Tstg −55 to 150 °C JEDEC JEITA ― ― Note1: Using continuous ly under heavy loads (e.g. the applicat ion of high TOSHIBA 2-7J1A temperatu re/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight : 0.36 g (typ.) reliability significan tly even if the operating conditions (i .e. operating temperature/current/voltage, etc.) are within the absolute maxi.
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