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2SC3076

Silicon NPN Transistor

Description

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3076 Power Amplifier Applications Power Switching Applications 2SC3076 Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) Excellent switching time: tstg = 1.0 μs (typ.) Complementary to 2SA1241 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rati...

Toshiba Semiconductor

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