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2SC3671

Part Number	2SC3671
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3671 Strobe Flash Applications Medium Power Amplifier App...
Datasheet	2SC3671 PDF File

Overview

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3671 Strobe Flash Applications Medium Power Amplifier Applications 2SC3671 Unit: mm • High DC current gain and excellent hFE linearity : hFE = 140 to 450 (VCE = 2 V, IC = 0.
5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) • Low saturation voltage: VCE (sat) = 1.
0 V (max) (IC = 4 A, IB = 0.
1 A) • High collector power dissipation Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCES VCEO VEBO IC ICP IB...

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