MGFC47B3538B
3. 5 – 3. 8GHz BAND / 50W
DESCRIPTION
The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use in 3. 5 – 3. 8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
OUTLINE DRAWING
FEATURES
Crass AB operation Internally matched to 50(ohm) High output power: Po(SAT) = 50 W (typ. ) High power gain: GP = 10 dB (TPE. ) @Po = 37dBm Distortion: EVM = 2. 0% (TPE. ) @ Po = 37dBm
Recommended Bias Condition
Vd = 12(V) ID = 1. 5 (A) Rg = 10 ohm
GF-60
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ABSOLUTE MAXIMUM RATINGS
Symbol VGDO VGSO MAXID PT *1 Tch Tstg
*1 : Tc=25deg. C
(Ta=25deg. C)...