Silicon Transistors. 2N2222 Datasheet

2N2222 Transistors. Datasheet pdf. Equivalent

Part 2N2222
Description Switching Silicon Transistors
Feature NPN 2N2221 – 2N2221A 2N2222 – 2N2222A SWITCHING SILICON TRANSISTORS The 2N2221-A and 2N2222-A are N.
Manufacture Comset Semiconductor
Datasheet
Download 2N2222 Datasheet



2N2222
NPN 2N2221 – 2N2221A
2N2222 – 2N2222A
SWITCHING SILICON TRANSISTORS
The 2N2221-A and 2N2222-A are NPN transistors mounted in TO-18 metal case .
They are designed for high-speed switching applications and feature useful current
gain over a wide range of collector current, low leakage currents and low saturation
voltages.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCBO
VEBO
IC
PD
TJ
TStg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature range
www.DataSheet.net/
Tamb = 25°
Tcase= 25°
Value
2N2221 2N2221A
2N2222 2N2222A
30 40
60 75
56
800
0.5
1.8
175
-65 to +200
Unit
V
V
V
mA
W
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-a
Thermal Resistance, Junction to ambient in free air
RthJ-c
Thermal Resistance, Junction to case
Value
50
187.5
Unit
°C/W
°C/W
1|4
Datasheet pdf - http://www.DataSheet4U.co.kr/



2N2222
NPN 2N2221 – 2N2221A
2N2222 – 2N2222A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
ICBO
IEBO
ICEX
VCEO
VCBO
VEBO
Collector Cutoff
Current
Emitter Cutoff
Current
Collector Cutoff
Current
Collector Emitter
Breakdown
Voltage (*)
Collector Base
Breakdown
Voltage
Emitter Base
Breakdown
Voltage
hFE
DC Current Gain
(*)
Test Condition(s)
VCB= 50 V Tj= 25°C 2N2221-2N2222
IE= 0
Tj= 150°C 2N2221-2N2222
VCB= 60 V Tj= 25°C 2N2221A-2N2222A
IE= 0
Tj= 150°C 2N2221A-2N2222A
VBE= 3.0 V, IC=0
2N2221-2N2222
2N2221A-2N2222A
Min Typ Mx
- - 10
- - 10
- - 10
- - 10
- - 10
Unit
nA
µA
nA
µA
nA
VCE= 60 V, -VBE= 3V 2N2221A-2N2222A - - 10 nA
IC= 10 mA, IB= 0
2N2221-2N2222
30 - -
V
2N2221A-2N2222A 40 - -
IC= 10 µA, IE= 0
2N2221-2N2222
2N2221A-2N2222A
www.DataSheet.net/
60
75
-
-
-
-
V
IE= 10 µA, IC= 0
2N2221-2N2222
5- -
V
2N2221A-2N2222A 6 - -
IC=0.1 mA, VCE=10 V
IC=1 mA, VCE=10 V
IC=10 mA, VCE=10 V
IC=10 mA, VCE=10 V
Tamb = -55°C
IC=150 mA, VCE=1 V
IC=150 mA, VCE=10 V
IC=500 mA, VCE=10 V
2N2221-2N2221A
2N2222-2N2222A
2N2221-2N2221A
2N2222-2N2222A
2N2221-2N2221A
2N2222-2N2222A
2N2221A
2N2222A
2N2221-2N2221A
2N2222-2N2222A
2N2221-2N2221A
2N2222-2N2222A
2N2221
2N2221A
2N2222
2N2222A
20 - -
35 - -
25 - -
50 - -
35 - -
75 - -
15 - -
35 - -
20 - -
50 - -
40 - 120
100 - 300
20 - -
25
30 - -
40
-
16/10/2012
COMSET SEMICONDUCTORS
2|4
Datasheet pdf - http://www.DataSheet4U.co.kr/


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