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TIC246N

Comset Semiconductors
Part Number TIC246N
Manufacturer Comset Semiconductors
Description (TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR
Published Dec 12, 2012
Detailed Description SEMICONDUCTORS TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N, TIC246S SILICON BIDIRECTIONAL TRIODE THYRISTOR • •...
Datasheet PDF File TIC246N PDF File

TIC246N
TIC246N

Overview
SEMICONDUCTORS TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N, TIC246S SILICON BIDIRECTIONAL TRIODE THYRISTOR • • • • • • • • High current triacs 16 A RMS 70 A Peak Glass Passivated Wafer 200 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1-3) 125 A peak current Compliance to ROHS DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.
ABSOLUTE MAXIMUM RATINGS http://www.
DataSheet4U.
net/ Symbol VDRM IT(RMS) ITSM IGM TC Tstg TL Ratings B Repetitive peak off-state voltage (see Note1) Full-cycle RMS on-state current at (or below) 70°C case temperature (see note2) Peak on-state surge current full-sine-wave (see Note3) Peak gate current Operating case temperature range Storage temperature range Lead temperature 1.
6 mm from case for 10 seconds 200 Value C 300 Unit M S N V A A A °C °C °C D 400 E 500 600 700 800 16 125 ±1 -40 to +110 -40 to +125 230 THERMAL CHARACTERISTICS Symbol R∂JC R∂JA Ratings Junction to case thermal resistance Junction to free air thermal resistance COMSET SEMICONDUCTORS Value ≤ 1.
9 ≤ 62.
5 Unit °C/W 1|3 30/10/2012 datasheet pdf - http://www.
DataSheet4U.
net/ SEMICONDUCTORS TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N, TIC246S ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol IDRM Ratings Test Condition(s) Min ±1.
2 Typ 12 -19 -16 34 0.
8 -0.
8 -0.
8 0.
9 22 -22 ±1.
4 ±400 ±100 ±9 Max ±2 50 -50 -50 2 -2 -2 2 40 Unit mA IGT VGT IH IL VTM dv/dt di/dt dv/dt© Repetitive peak VD = Rated VDRM, , IG = 0 off-state current TC = 110°C Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Gate trigger current Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Gate trigger voltage Vsupply = -12 V†,...


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