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SSM6J212FE
Silicon P-Channel MOSFET
Description
SSM6J212FE TOSHIBA Field-Effect
Transistor
Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J212FE ○ Power Management Switch Applications 1.5-V drive Low ON-resistance: RDS(ON) = 94.0 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 65.4 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 49.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 40.7 mΩ (max) (@VGS = -4.5 V) Unit: mm Absolute Maximum Ratings...
Toshiba Semiconductor
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SSM6J212FE
Silicon P-Channel MOSFET
- Toshiba Semiconductor
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