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2SA1362

Part Number	2SA1362
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1362 Low Frequency Power Amplifier Applications Power Swi...
Datasheet	2SA1362 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1362 Low Frequency Power Amplifier Applications Power Switching Applications 2SA1362 Unit: mm • High DC current gain: hFE = 120 to 400 • Low saturation voltage: VCE (sat) = −0.
2 V (max) (IC = −400 mA, IB = −8 mA) • Suitable for driver stage of small motor • Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −15 V Collector-emitter voltage VCEO −15 V Emitter-base voltage VEBO −5 V Collector current IC −800 mA Base current IB −160 mA JEDEC TO-236MOD Collector power dissipation PC 200 mW JEITA SC-59 Junction temperature Storage temperature ra...

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