Trench MOSFET. FDMC8622 Datasheet

FDMC8622 Datasheet PDF, Equivalent


Part Number

FDMC8622

Description

N-Channel Power Trench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
Download FDMC8622 Datasheet PDF


FDMC8622 Datasheet
September 2012
FDMC8622
N-Channel Power Trench® MOSFET
100 V, 16 A, 56 m:
Features
General Description
„ Max rDS(on) = 56 m: at VGS = 10 V, ID = 4 A
„ Max rDS(on) = 90 m: at VGS = 6 V, ID = 3 A
„ High performance trench technology for extremely low rDS(on)
„ High power and current handling capability in a widely used
surface mount package
„ 100% UIL Tested
„ Termination is Lead-free and RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been optimized for rDS(on), switching performance and
ruggedness.
Application
„ DC-DC Primary Switch
D
D
D
D
D5
D6
D7
4G
3S
2S
G
SS
S
MLP 3.3X3.3
D8
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
TC = 25 °C
TC = 25 °C
-Continuous
TA = 25 °C
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1a)
Ratings
100
±20
16
16
4
30
37
31
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RTJC
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDMC8622
Device
FDMC8622
Package
MLP 3.3X3.3
(Note 1)
(Note 1a)
4.0
50
°C/W
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMC8622 Rev.C2
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

FDMC8622 Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
'BVDSS
'TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 PA, VGS = 0 V
ID = 250 PA, referenced to 25 °C
VDS = 80 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
100 V
69 mV/°C
1
±100
PA
nA
On Characteristics
VGS(th)
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 PA
ID = 250 PA, referenced to 25 °C
VGS = 10 V, ID = 4 A
VGS = 6 V, ID = 3 A
VGS = 10 V, ID = 4 A,
VDD = 10 V, ID = 4 A
TJ = 125 °C
2
2.9
-9
43.7
59.9
76.4
8.9
4V
mV/°C
56
90 m:
98
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 50 V, VGS = 0 V,
f = 1 MHz
302 402
72.5 96
4.2 6
1.0
pF
pF
pF
:
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
VDD = 50 V, ID = 4 A,
VGS = 10 V, RGEN = 6 :
VGS = 0 V to 10 V
VGS = 0 V to 5 V
VDD = 50 V,
ID = 4 A
5.9 12
1.6 10
10.2 18
2.2 10
5.2 7.3
3.0 4.1
1.4
1.4
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 4 A
VGS = 0 V, IS = 1.7 A
(Note 2)
(Note 2)
0.8 1.3
V
0.8 1.2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 4 A, di/dt = 100 A/Ps
36 57 ns
28 45 nC
NOTES:
1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper
b. 125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; N-ch: L = 3.0 mH, IAS = 5.0 A, VDD = 100 V, VGS = 10 V.
©2012 Fairchild Semiconductor Corporation
FDMC8622 Rev.C2
2
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/


Features Datasheet pdf FDMC8622 N-Channel Power Trench® MOSFET September 2012 FDMC8622 N-Channel Po wer Trench® MOSFET 100 V, 16 A, 56 m: Features „ Max rDS(on) = 56 m: at VGS = 10 V, ID = 4 A „ Max rDS(on) = 90 m: at VGS = 6 V, ID = 3 A „ High perform ance trench technology for extremely lo w rDS(on) „ High power and current han dling capability in a widely used surfa ce mount package „ 100% UIL Tested „ Termination is Lead-free and RoHS Compl iant General Description This N-Channe l MOSFET is produced using Fairchild Se miconductor‘s advanced Power Trench® process that has been optimized for rD S(on), switching performance and rugged ness. Application „ DC-DC Primary Swi tch D D D D D D D G 5 6 7 8 4 3 2 1 G S S S D S S S MLP 3.3X3.3 M OSFET Maximum Ratings TA = 25 °C unles s otherwise noted Symbol VDS VGS Parame ter Drain to Source Voltage Gate to Sou rce Voltage Drain Current -Continuous ( Package limited) ID -Continuous (Silico n limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy.
Keywords FDMC8622, datasheet, pdf, Fairchild Semiconductor, N-Channel, Power, Trench, MOSFET, DMC8622, MC8622, C8622, FDMC862, FDMC86, FDMC8, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)