N-Channel MOSFET. FDP12N50F Datasheet

FDP12N50F Datasheet PDF, Equivalent


Part Number

FDP12N50F

Description

N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 10 Pages
PDF Download
Download FDP12N50F Datasheet PDF


FDP12N50F Datasheet
FDP12N50F / FDPF12N50FT
N-Channel MOSFET
500V, 11.5A, 0.7
Features
• RDS(on) = 0.59( Typ.)@ VGS = 10V, ID = 6A
• Low gate charge ( Typ. 21nC)
• Low Crss ( Typ. 11pF)
• Fast switching
• 100% avalanche tested
• Improve dv/dt capability
• RoHS compliant
December 2007
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
D
GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
FDP12N50F FDPF12N50FT
500
±30
11.5 11.5*
6.9 6.9*
(Note 1)
46
46*
(Note 2)
456
(Note 1)
11.5
(Note 1)
16.5
(Note 3)
4.5
165 42
1.33 0.33
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
FDP12N50F FDPF12N50FT
0.75
3.0
0.5 -
62.5 62.5
Units
oC/W
©2007 Fairchild Semiconductor Corporation
FDP12N50F / FDPF12N50FT Rev. A1
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

FDP12N50F Datasheet
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDP12N50F
Device
FDP12N50F
Package
TO-220
Reel Size
-
Tape Width
-
FDPF12N50FT
FDPF12N50FT
TO-220F
-
-
Quantity
50
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250µA, VGS = 0V, TJ = 25oC
ID = 250µA, Referenced to 25oC
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125oC
VGS = ±30V, VDS = 0V
500
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250µA
VGS = 10V, ID = 6A
VDS = 40V, ID = 6A
(Note 4)
3.0
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V, ID = 11.5A
VGS = 10V
(Note 4, 5)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250V, ID = 11.5A
RG = 25
(Note 4, 5)
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 11.5A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 11.5A
dIF/dt = 100A/µs
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 6.9mH, IAS = 11.5A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 11.5A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300µs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
(Note 4)
-
-
-
-
-
Typ.
-
0.5
-
-
-
-
0.59
12
1050
135
11
21
6
9
21
45
50
35
-
-
-
134
0.37
Max. Units
-
-
10
100
±100
V
V/oC
µA
nA
5.0 V
0.7
-S
1395
180
17
30
-
-
pF
pF
pF
nC
nC
nC
50 ns
100 ns
110 ns
80 ns
11.5 A
46 A
1.5 V
- ns
- µC
FDP12N50F / FDPF12N50FT Rev. A1
2 www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/


Features Datasheet pdf FDP12N50F / FDPF12N50FT N-Channel MOSFET December 2007 UniFETTM FDP12N50F / F DPF12N50FT N-Channel MOSFET 500V, 11.5A , 0.7Ω Features • RDS(on) = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A • Low ga te charge ( Typ. 21nC) • Low Crss ( T yp. 11pF) • Fast switching • 100% a valanche tested • Improve dv/dt capab ility • RoHS compliant tm Descriptio n These N-Channel enhancement mode powe r field effect transistors are produced using Fairchild’s proprietary, plana r stripe, DMOS technology. This advance technology has been especially tailore d to minimize on-state resistance, prov ide superior switching performance, and withstand high energy pulse in the ava lanche and commutation mode. These devi ces are well suited for high efficient switching mode power supplies and activ e power factor correction. D G G D S TO-220 FDP Series GD S TO-220F FDPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gat.
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