N-Channel MOSFET. FDP12N50NZ Datasheet

FDP12N50NZ Datasheet PDF, Equivalent


Part Number

FDP12N50NZ

Description

N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 10 Pages
PDF Download
Download FDP12N50NZ Datasheet PDF


FDP12N50NZ Datasheet
March 2013
FDP12N50NZ / FDPF12N50NZ
N-Channel UniFETTM II MOSFET
500 V, 11.5 A, 520 m
Features
• RDS(on) = 460 m(Typ.) @ VGS = 10 V, ID = 5.75 A
• Low Gate Charge (Typ. 23 nC )
• Low Crss (Typ. 14 pF )
• 100% Avalanche Tested
• ESD Improved Capability
• RoHS Compliant
Applications
Description
UniFETTM II MOSFET is Fairchild Semiconductor®’s high volt-
age MOSFET family based on advanced planar stripe and
DMOS technology. This advanced MOSFET family has the
smallest on-state resistance among the planar MOSFET, and
also provides superior switching performance and higher ava-
lanche energy strength. In addition, internal gate-source ESD
diode allows UniFET II MOSFET to withstand over 2kV HBM
surge stress. This device family is suitable for switching power
converter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp ballasts.
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
D
G
G
D
S
TO-220
G
D
S
TO-220F
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
S
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP12N50NZ FDPF12N50NZ
500
±25
11.5 11.5*
6.9 6.9*
46 46*
560
11.5
17
4.5
170 42
1.37 0.33
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
*Dran current limited by maximum junction temperature
Thermal Characteristics
Symbol
RJC
RCS
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Case to Sink Typ
Thermal Resistance, Junction to Ambient, Max.
FDP12N50NZ
0.73
0.5
62.5
FDPF12N50NZ
3.0
-
62.5
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. C0
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

FDP12N50NZ Datasheet
Package Marking and Ordering Information
Device Marking
FDP12N50NZ
FDPF12N50NZ
Device
FDP12N50NZ
FDPF12N50NZ
Package
TO-220
TO-220F
Reel Size
-
-
Tape Width
-
-
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250A, VGS = 0V, TJ = 25oC
ID = 250A, Referenced to 25oC
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125oC
VGS = ±25V, VDS = 0V
500
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250A
VGS = 10V, ID = 5.75A
VDS = 20V, ID = 5.75A
3.0
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V, ID = 11.5A
VGS = 10V
(Note 4)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250V, ID = 11.5A
RG = 25
(Note 4)
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 11.5A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
VGS = 0V, ISD = 11.5A
dIF/dt = 100A/s
2. L = 8.5mH, IAS = 11.5A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 11.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics
-
-
-
-
-
Typ.
-
0.5
-
-
-
-
0.46
12
945
155
14
23
5.5
9.6
20
50
60
45
-
-
-
315
2.0
Quantity
50
50
Max. Unit
-V
- V/oC
1
A
10
±10 A
5.0 V
0.52
-S
1235
205
20
30
-
-
pF
pF
pF
nC
nC
nC
50 ns
110 ns
130 ns
100 ns
11.5 A
46 A
1.4 V
- ns
- C
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. C0
2 www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/


Features Datasheet pdf FDP12N50NZ / FDPF12N50NZ N-Channel UniFE TTM II MOSFET March 2013 FDP12N50NZ / FDPF12N50NZ N-Channel UniFETTM II MOSF ET 500 V, 11.5 A, 520 m Features • RDS(on) = 460 m (Typ.) @ VGS = 1 0 V, ID = 5.75 A • Low Gate Charge (T yp. 23 nC ) • Low Crss (Typ. 14 pF ) • 100% Avalanche Tested • ESD Impro ved Capability • RoHS Compliant Desc ription UniFETTM II MOSFET is Fairchild Semiconductor®’s high voltage MOSFE T family based on advanced planar strip e and DMOS technology. This advanced MO SFET family has the smallest on-state r esistance among the planar MOSFET, and also provides superior switching perfor mance and higher avalanche energy stren gth. In addition, internal gate-source ESD diode allows UniFET II MOSFET to wi thstand over 2kV HBM surge stress. This device family is suitable for switchin g power converter applications such as power factor correction (PFC), flat pan el display (FPD) TV power, ATX and elec tronic lamp ballasts. Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Po.
Keywords FDP12N50NZ, datasheet, pdf, Fairchild Semiconductor, N-Channel, MOSFET, DP12N50NZ, P12N50NZ, 12N50NZ, FDP12N50N, FDP12N50, FDP12N5, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)