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2SC3657

Silicon NPN Power Transistors

Description

isc Silicon NPN Power Transistor 2SC3657 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM ...

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