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2SB947
Silicon PNP Power Transistor
Description
isc Silicon
PNP
Power
Transistor
2SB947 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.6V(Max)@IC= -7A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCB...
Inchange Semiconductor
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