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2SB1562

Silicon PNP Power Transistor

Description

isc Silicon PNP Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 300~1000@ (VCE= -5V , IC= -0.5A) ·Low Saturation Voltage- : VCE(sat)= -0.5V(TYP)@ (IC= -2A, IB= -20mA) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO...

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