SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor 2SC4390
Features
Adoption of MBIT process. High DC current gain (hFE=800 to 3200). Large current capacity (IC=2A). Low collector-to-emitter saturation voltage (VCE(sat) 0.3V). 15V).
High VEBO (VEBO
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitt...
