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TK32E12N1
Silicon N-Channel MOSFET
Description
MOSFETs Silicon N-channel MOS (U-MOS-H) TK32E12N1 1. Applications Switching Voltage
Regulator
s 2. Features (1) Low drain-source on-resistance: RDS(ON) = 11.0 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK32E12N1 1: Ga...
Toshiba
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