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TPN2R203NC
Field Effect Transistor
Description
TPN2R203NC MOSFETs Silicon N-channel MOS (U-MOS) TPN2R203NC 1. Applications Power Management Switches 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3:...
Toshiba
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TPN2R203NC
Field Effect Transistor
- Toshiba
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