(PDF) 2SD1819A Datasheet PDF | SeCoS





2SD1819A Datasheet PDF

Part Number 2SD1819A
Description NPN Silicon General Purpose Transistor
Manufacture SeCoS
Total Page 2 Pages
PDF Download Download 2SD1819A Datasheet PDF

Features: Datasheet pdf 2SD1819A NPN Silicon Elektronische Baue lemente RoHS Compliant Product General Purpose Transistor SOT-323 FEATURES z z z Dim A L 3 Min 1.800 1.150 0.800 0.300 1.200 0.000 0.100 0.350 0.590 2.0 00 0.280 Max 2.200 1.350 1.000 0.400 1 .400 0.100 0.250 0.500 0.720 2.400 0.42 0 High foward current transfer ratio h FE. Low collector to emitter saturation voltage VCE(sat). A B C B S 2 Comple mentary to 2SB1218A 1 Top View D G H J COLLECTOR 3 1 BASE V G C K K J 2 EMITTER D H L S V MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ Tstg Collector -Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junc tion Temperature Storage Temperature Pa rameter Value 60 50 7 100 150 150 -55-1 50 All Dimension in mm Units V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified ) Parameter Collector-base breakdown vo ltage Collector-emitter breakdown voltage Emitter-base breakdown voltag.

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2SD1819A datasheet
Elektronische Bauelemente
2SD1819A
NPN Silicon
General Purpose Transistor
RoHS Compliant Product
FEATURES
z High foward current transfer ratio hFE.
z Low collector to emitter saturation voltage VCE(sat).
z Complementary to 2SB1218A
A
L
3
Top View
12
BS
COLLECTOR
3
VG
1
BASE
2
EMITTER
C
DH
K
J
MAXIMUM RATINGS* TA=25unless otherwise noted
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
60
VCEO
Collector-Emitter Voltage
50
VEBO
Emitter-Base Voltage
7
IC Collector Current -Continuous
100
PC Collector Dissipation
150
TJ Junction Temperature
150
Tstg Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
SOT-323
Dim Min Max
A 1.800 2.200
B 1.150 1.350
C 0.800 1.000
D 0.300 0.400
G 1.200 1.400
H 0.000 0.100
J 0.100 0.250
K 0.350 0.500
L 0.590 0.720
S 2.000 2.400
V 0.280 0.420
All Dimension in mm
Units
V
V
V
mA
mW
TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC =10μA, IE=0
60
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Base cut-off current
Emitter cut-off current
V(BR)CEO IC =2mA, IB=0
V(BR)EBO IE=10μA, IC=0
ICBO VCB=20V, IE=0
ICEO VCE=10V, IB=0
IEBO VEB=7V, IC=0
50 V
7V
0.1 μA
100 μA
0.1 μA
DC current gain
hFE(1)
hFE(2)
VCE=10V, IC=2mA
VCE=2V, IC=100mA
160 460
90
Collector-emitter saturation voltage
VCE(sat) IC=100mA, IB=10mA
0.3 V
Transition frequency
fT VCB=10V, IC=2mA, f=200MHz
150 MHz
Collector output capacitance
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
http://www.SeCoSGmbH.com
01-Jun-2007 Rev. A
Cob
Q
160-260
ZQ
VCB=10V, IE=0, f=1MHz
R
210-340
ZR
3.5 pF
S
290-460
ZS
Any changing of specification will not be informed individual
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2SD1819A datasheet
Elektronische Bauelemente
Typical Characteristics
2SD1819A
NPN Silicon
General Purpose Transistor
http://www.SeCoSGmbH.com
01-Jun-2007 Rev. A
Any changing of specification will not be informed individual
Page 2 of 2
Free Datasheet http://www.datasheet4u.com/




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