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2SD1815

Part Number	2SD1815
Manufacturer	GME
Description	NPN Epitaxial Planar Silicon Transistors
Published	May 17, 2018
Detailed Description	Production specification NPN Epitaxial Planar Silicon Transistors FEATURES  Adoption of FBET,MBIT processes. Pb  ...
Datasheet	2SD1815 PDF File

Overview

Production specification NPN Epitaxial Planar Silicon Transistors FEATURES  Adoption of FBET,MBIT processes.
Pb  Large current capacity and wide ASO.
Lead-free  Low collector-to-emitter saturation voltage.
 Excllent linearity of hFE.
 High fT.
 Fast switching time.
2SD1815 APPLICATIONS  Relay drivers,high-speed inverters, Converters,and other high-current Switching applications.
TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6V IC Collector Current 3A ICP Collector Power Dissipation 6A PC Collector Power Dissipation 1W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ W019 Rev.
A www.
gmesemi.
com 1 Production specification NPN Epitaxial Planar Silicon Transistors 2SD1815 ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified Parameter...

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