2SC5706D Datasheet PDF


Part Number

2SC5706D

Description

NPN Silicon General Purpose Transistor

Manufacture

SeCoS

Total Page 3 Pages
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Download 2SC5706D Datasheet PDF


Features Datasheet pdf 2SC5706 NPN Silicon Elektronische Bauele mente RoHS Compliant Product D Genera l Purpose Transistor TO-252 6. 50Ć0. 15 5. 30Ć0. 10 2. 30Ć0. 10 0. 51Ć0. 05 FEATURES 9. 70Ć0. 20 0. 75Ć0. 1 0 ¡ELarge current capacitance ¡ELow collector-to-emitter saturation voltage ¡EHigh-speed switching ¡EHigh allowa ble power dissipation MARKING : 5706 (W ith Date Code) C 5 0. 51Ć0. 10 1. 2 0 0Ć0. 10 5 0. 80Ć0. 10 5 1. 60Ć0. 15 0. 6 0 Ć9 0. 51 2. 30Ć0. 10 0. 60Ć 0. 10 MAXIMUM RATINGS* TA=25ćunl ess otherwise noted Parameter Collector -Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Cu rrent (Pulse) Base Current Junction Temperature Storag.
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2SC5706D Datasheet
Elektronische Bauelemente
2SC5706 D
NPN Silicon
General Purpose Transistor
FEATURES
Large current capacitance
RoHS Compliant Product
6. 50Ć0. 15
5. 30Ć0. 10
C
TO-252
0. 51Ć0. 05
2. 30Ć0. 10
Low collector-to-emitter saturation voltage
High-speed switching
0. 51Ć0. 10 1. 20
5
High allowable power dissipation
0Ć0. 10
5
5
MARKING : 5706
(With Date Code)
MAXIMUM RATINGS* TA=25ćunless otherwise noted
0. 80Ć0. 10
2. 30Ć0. 10
B
C
0. 60Ć0. 10
2. 30Ć0. 10
E
0 Ć9
0. 51
Parameter
Symbol
Ratings
Unit
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCES
80
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
Collector Current
VEBO
ICBO
6
5
V
A
Collector Current (Pulse)
ICP 7.5
A
Base Current
IB 1.2
A
Junction Temperature
Tj +150
°C
Storage Temperature
Total Power Dissipation
TSTG
PD
PD(TC=25°C)
-55~+150
0.8
15
°C
W
W
ELECTRICAL CHARACTERISTICS (Tamb=25OCunless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Symbol
BVCBO
Min Typ.
80 -
Max Unit. Test Conditions
- V IC=10µA, IE=0
Collector-Emitter Breakdown Voltage
BVCES 80 -
- V IC=100µA, RBE=0
Collector-Emitter Breakdown Voltage
BVCEO 50 -
- V IC=1mA, RBE=
Emitter-Base Breakdown Voltage
BVEBO 6 -
- V IE=10µA, IC=0
Collector-Base Cutoff Current
ICBO
--
1 µA VCB=40V, IE=0
Emitter-Base Cutoff Current
IEBO
--
1 µA VEB=4V, IC=0
Collector Saturation Voltage 1
*VCE(sat)1
-
-
135 mV IC=1A, IB=50mA
Collector Saturation Voltage 2
*VCE(sat)2
-
-
240 mV IC=2A, IB=100mA
Base Saturation Voltage
*V BE(sat)
-
-
1.2 V IC=2A, IB=100mA
DC Current Gain
*hFE
200 -
560
VCE=2V, IC=500mA
Gain-Bandwidth Product
fT
- 400
- MHz VCE=10V, IC=500mA
Output Capacitance
Cob
- 15
- pF VCB=10V, f=1MHz
Turn-On Time
ton
- 35
- ns See specified test circuit.
Storage Time
tstg - 300 - ns See specified test circuit.
Fall Time
tf
- 20
- ns See specified test circuit.
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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