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BSZ086P03NS3EG

Infineon

Power MOSFET


Description
BSZ086P03NS3E G OptiMOSTM P3 Power-Transistor Features single P-Channel in S3O8 Qualified according JEDEC 1) for target applications 150 °C operating temperature V GS=25 V, specially suited for notebook applications Pb-free; RoHS compliant ESD protected applications: battery management, load switching Halogen-free according to IEC61249-2-21 ...



Infineon

BSZ086P03NS3EG

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