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2SD1162

Silicon NPN Darlington Power Transistor

Description

isc Silicon NPN Darlington Power Transistor 2SD1162 DESCRIPTION ·High DC Current Gain- : hFE= 400(Min.)@IC= 2A ·High Switching Speed ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, low speed switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=2...

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