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FQP2N80. P2N80 Datasheet

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FQP2N80. P2N80 Datasheet






P2N80 FQP2N80. Datasheet pdf. Equivalent




P2N80 FQP2N80. Datasheet pdf. Equivalent





Part

P2N80

Description

FQP2N80

Manufacture

Fairchild Semiconductor

Datasheet
Download P2N80 Datasheet


Fairchild Semiconductor P2N80

P2N80; FQP2N80 — N-Channel QFET® MOSFET Nov ember 2013 FQP2N80 N-Channel QFET® MO SFET 800 V, 2.4 A, 6.3 Ω Description T his N-Channel enhancement mode power MO SFET is produced using Fairchild Semico nductor’s proprietary planar stripe a nd DMOS technology. This advanced MOSFE T technology has been especially tailor ed to reduce on-state resistance, and t o provide superior switch.


Fairchild Semiconductor P2N80

ing performance and high avalanche energ y strength. These devices are suitable for switched mode power supplies, activ e power factor correction (PFC), and el ectronic lamp ballasts. Features • 2 .4 A, 800 V, RDS(on) = 6.3 Ω (Max.) @ VGS = 10 V, ID = 1.2 A • Low Gate Ch arge (Typ. 12 nC) • Low Crss (Typ. 5. 5 pF) • 100% Avalanche Tested D GD S G TO-220 S Absolute Max.


Fairchild Semiconductor P2N80

imum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25 C unless otherwise noted. Parameter D rain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1 ) FQP2N80 800 2.4 1.52 9.6 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Unit V A A A V mJ A mJ V/ns W W/°C °C °C G ate-Source Voltage Single.



Part

P2N80

Description

FQP2N80

Manufacture

Fairchild Semiconductor

Datasheet
Download P2N80 Datasheet




 P2N80
FQP2N80
N-Channel QFET® MOSFET
800 V, 2.4 A, 6.3 Ω
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
November 2013
Features
• 2.4 A, 800 V, RDS(on) = 6.3 (Max.) @ VGS = 10 V,
ID = 1.2 A
• Low Gate Charge (Typ. 12 nC)
• Low Crss (Typ. 5.5 pF)
• 100% Avalanche Tested
D
GDS
TO-220
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
S
FQP2N80
800
2.4
1.52
9.6
± 30
180
2.4
8.5
4.0
85
0.68
-55 to +150
300
FQP2N80
1.47
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2000 Fairchild Semiconductor Corporation
FQP2N80 Rev. C1
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/





 P2N80
Package Marking and Ordering Information
Part Number
FQP2N80
Top Mark
FQP2N80
Package Packing Method
TO-220
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted.
Test Conditions
Min Typ Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
ΔBVDSS Breakdown Voltage Temperature
/ ΔTJ Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 μA
ID = 250 μA, Referenced to 25°C
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
800
--
--
--
--
--
--
0.9
--
--
--
--
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 1.2 A
VDS = 50 V, ID = 1.2 A
3.0 --
-- 4.9
-- 2.65
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 425
-- 45
-- 5.5
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 400 V, ID = 2.4 A,
RG = 25 Ω
(Note 4)
VDS = 640 V, ID = 2.4 A,
VGS = 10 V
(Note 4)
--
--
--
--
--
--
--
12
30
25
28
12
2.6
6.0
--
--
10
100
100
-100
5.0
6.3
--
550
60
7.0
35
70
60
65
15
--
--
V
V/°C
μA
μA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.4 A
trr Reverse Recovery Time
VGS = 0 V, IS = 2.4 A,
Qrr Reverse Recovery Charge
dIF / dt = 100 A/μs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 59 mH, IAS = 2.4 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 2.4 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
-- -- 2.4
-- -- 9.6
-- -- 1.4
-- 480
--
-- 2.0
--
A
A
V
ns
μC
©2000 Fairchild Semiconductor Corporation
FQP2N80 Rev. C1
2
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/





 P2N80
Typical Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
100
6.5 V
6.0 V
Bottom : 5.5 V
10-1
10-2
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
12
10
VGS = 10V
8 VGS = 20V
6
4
Note : TJ = 25
2
0123456
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
700
600
500
400
300
200
100
0
10-1
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss ds gd
Crss = Cgd
Coss
Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
100
10-1
2
150oC
25oC
-55oC
Notes :
1. VDS = 50V
2. 250μ s Pulse Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
100
10-1
0.2
150
25
Notes :
1. VGS = 0V
2. 250μ s Pulse Test
0.4 0.6 0.8 1.0
VSD, Source-Drain voltage [V]
1.2
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 160V
10 VDS = 400V
VDS = 640V
8
6
4
2
Note : ID = 2.4A
0
0 2 4 6 8 10 12 14
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor Corporation
FQP2N80 Rev. C1
3
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/



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