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N-Channel MOSFET. ME75N75T Datasheet

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N-Channel MOSFET. ME75N75T Datasheet






ME75N75T MOSFET. Datasheet pdf. Equivalent




ME75N75T MOSFET. Datasheet pdf. Equivalent





Part

ME75N75T

Description

N-Channel MOSFET



Feature


ME75N75T / ME75N75T-G N- Channel 75-V (D -S) MOSFET GENERAL DESCRIPTION The ME75 N75T is the N-Channel logic enhancement mode power field effect transistors ar e produced using high cell density, DMO S trench technology. This high density process is especially tailored to minim ize on-state resistance. FEATURES ● RDS(ON)≦10mΩ@VGS=10V ● Super high density cell design for e.
Manufacture

Matsuki

Datasheet
Download ME75N75T Datasheet


Matsuki ME75N75T

ME75N75T; xtremely low RDS(ON) ● Exceptional on- resistance and maximum DC current capab ility APPLICATIONS PIN CONFIGURATION ( TO-220) Top View ● Power Management DC/DC Converter ● Load Switch e O rdering Information: ME75N75T (Pb-free) ME75N75T-G (Green product-Halogen free ) Absolute Maximum Ratings (TC=25℃ U nless Otherwise Noted) Parameter Drain- Source Voltage Gate-Source V.


Matsuki ME75N75T

oltage Continuous Drain Current* Pulsed Drain Current Maximum Power Dissipation TC=25℃ TC=70℃ TC=25℃ TC=70℃ S ymbol VDSS VGSS ID IDM PD TJ, Tstg RθJ C Limit 75 ±25 93 78 372 200 140 -55 to 175 0.75 Unit V V A A W ℃ ℃/W Operating Junction and Storage Temperat ure Range Thermal Resistance-Junction t o Case** ** The device mounted on 1in2 FR4 board with 2 oz copper. * C.


Matsuki ME75N75T

alculated continuous current based on ma ximum allowable junction temperature. P ackage limitation current is 80A. Apr, 2010-Ver1.0 Free Datasheet http://www .datasheet4u.com/ 01 ME75N75T / ME75N 75T-G N- Channel 75-V (D-S) MOSFET Elec trical Characteristics (TA =25℃ Unles s Otherwise Specified) Symbol STATIC BV DSS VGS(th) IGSS IDSS RDS(ON) VSD DYNAM IC Qg Qg Qgs Qgd Rg .

Part

ME75N75T

Description

N-Channel MOSFET



Feature


ME75N75T / ME75N75T-G N- Channel 75-V (D -S) MOSFET GENERAL DESCRIPTION The ME75 N75T is the N-Channel logic enhancement mode power field effect transistors ar e produced using high cell density, DMO S trench technology. This high density process is especially tailored to minim ize on-state resistance. FEATURES ● RDS(ON)≦10mΩ@VGS=10V ● Super high density cell design for e.
Manufacture

Matsuki

Datasheet
Download ME75N75T Datasheet




 ME75N75T
N- Channel 75-V (D-S) MOSFET
ME75N75T / ME75N75T-G
GENERAL DESCRIPTION
The ME75N75T is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance.
PIN CONFIGURATION
(TO-220)
Top View
FEATURES
RDS(ON)10m@VGS=10V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management
DC/DC Converter
Load Switch
e Ordering Information: ME75N75T (Pb-free)
ME75N75T-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDSS
75
V
Gate-Source Voltage
VGSS
±25
V
Continuous Drain Current*
TC=25
TC=70
ID
93
78
A
Pulsed Drain Current
IDM 372
A
Maximum Power Dissipation
TC=25
TC=70
PD
200
140
W
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 175
Thermal Resistance-Junction to Case**
RθJC
0.75
* Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 80A.
** The device mounted on 1in2 FR4 board with 2 oz copper.
℃/W
Apr, 2010-Ver1.0
01Free Datasheet http://www.datasheet4u.com/




 ME75N75T
N- Channel 75-V (D-S) MOSFET
ME75N75T / ME75N75T-G
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol
Parameter
Limit
Min Typ Max Unit
STATIC
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON)
VSD
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-Resistance*
Diode Forward Voltage *
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±25V
VDS=75V, VGS=0V
VGS=10V, ID=40A
IS=40A, VGS=0V
75 V
2.0 4.0 V
±100 nA
1 μA
8 10 mΩ
0.9 1.2
V
DYNAMIC
Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Rg Gate Resistance
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDD=60V, VGS=10V, ID=75A
VDD=60V, VGS=4.5V, ID=75A
VDS=0V, VGS=0V, f=1MHz
VDS=20V, VGS=0V, f=1MHz
112
28
27
30
0.9
4900
534
175
td(on)
tr
td(off)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
VGS =10V, RL=15Ω
VDD=30V, RG=10Ω
48
36
144
tf Turn-Off Fall Time
48
Notes: a. pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki reserves the right to improve product design, functions and reliability without notice.
nC
Ω
pF
ns
Apr, 2010-Ver1.0
02Free Datasheet http://www.datasheet4u.com/




 ME75N75T
N- Channel 75-V (D-S) MOSFET
Typical Characteristics (TJ =25Noted)
ME75N75T / ME75N75T-G
Apr, 2010-Ver1.0
03Free Datasheet http://www.datasheet4u.com/






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