PD - 97577
INSULATED GATE BIPOLAR TRANSISTOR Features
Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution Lead Free Package
IRGP4066PbF IRGP4066-EPbF
C
VCES =...
