SPB80N03L. 80N03L Datasheet

80N03L Datasheet PDF, Equivalent


Part Number

80N03L

Description

SPB80N03L

Manufacture

Siemens

Total Page 10 Pages
PDF Download
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80N03L Datasheet
SPP80N03L
SIPMOS® Power Transistor
Features
N channel
Enhancement mode
Avalanche rated
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
Logic Level
dv/dt rated
175°C operating temperature
VDS
RDS(on)
ID
30
0.006
80
V
A
Type
SPP80N03L
SPB80N03L
Package Ordering Code Packaging
P-TO220-3-1 Q67040-S4735-A2 Tube
P-TO263-3-2 Q67040-S4735-A3 Tape and Reel
Pin 1 Pin 2 Pin 3
GDS
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC = 25 °C, 1)
TC = 100 °C
ID
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 80 A, VDD = 25 V, RGS = 25
IDpulse
EAS
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
EAR
dv/dt
IS = 80 A, VDS = 24 V, di/dt = 200 A/µs,
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
Semiconductor Group
1
Value
80
80
320
700
30
6
±20
300
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
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80N03L Datasheet
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area2)
SPP80N03L
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
RthJA
- - 0.5 K/W
- - 62
- - 62
- - 40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS
ID = 240 µA
Zero gate voltage drain current
VDS = 30 V, VGS = 0 V, Tj = 25 °C
VDS = 30 V, VGS = 0 V, Tj = 150 °C
V(BR)DSS 30
-
-V
VGS(th) 1.2 1.6
2
I DSS
µA
0.1 1
- - 100
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 4.5 V, ID = 80 A
VGS = 10 V, ID = 80 A
I GSS
RDS(on)
- 10 100 nA
- 0.0053 0.008
- 0.0033 0.006
1current limited by bond wire
2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
Semiconductor Group
2
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Features Datasheet pdf SPP80N03L SIPMOS® Power Transistor Feat ures • N channel • Enhancement mode Product Summary Drain source voltage Drain-Source on-state resistance Contin uous drain current VDS ID 30 80 V A RDS(on) 0.006 Ω • Avalanche rated • Logic Level • dv/dt rated • 17 5°C operating temperature Type SPP80N 03L SPB80N03L Package Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S P- TO220-3-1 Q67040-S4735-A2 Tube P-TO263- 3-2 Q67040-S4735-A3 Tape and Reel Maxi mum Ratings, at Tj = 25 °C, unless oth erwise specified Parameter Continuous d rain current Symbol Value 80 80 320 700 30 6 kV/µs mJ Unit A ID TC = 25 °C , TC = 100 °C 1) Pulsed drain curren t IDpulse EAS EAR dv/dt TC = 25 °C A valanche energy, single pulse ID = 80 A, VDD = 25 V, RGS = 25 Ω Avalanche e nergy, periodic limited by Tjmax Revers e diode dv/dt IS = 80 A, VDS = 24 V, d i/dt = 200 A/µs, Tjmax = 175 °C Gate source voltage Power dissipation VGS P tot T j , Tstg ±20 300 -55... +175 55/175/56 V W °C TC = 25 °C Operating and storage .
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