NTGD3148N Power MOSFET
20 V, 3.5 A, Dual N-Channel, TSOP-6
Features
ăLow Threshold Levels, VGS(th) < 1.5 V ăLow Gate Charge (3.8 nC) ăLeading Edge Trench Technology of Low RDS(on) ăHigh Power and Current Handling Capability ăThis is a Pb-Free Device
Applications
http://onsemi.com N-CHANNEL MOSFET
V(BR)DSS 20 V RDS(on) Max 70 mW @ 4.5 V 100 mW @ 2.5 V ...
